parameter symbol max. units drain-source voltage v ds 30 gate-source voltage v gs 12 continuous drain or source 25c i d 8.3 current (v gs 4.5v) 70c 6.6 a pulsed drain current i dm 66 power dissipation 25c p d 2.5 70c 1.6 schottky and body diode 25c i f (av) 3.5 a average forwardcurrent 70c 2.2 junction & storage temperature range t j , t stg C55 to 150 c co-pack n-channel hexfet ? power mosfet and schottky diode ideal for synchronous rectifiers in dc-dc converters up to 5a output low conduction losses low switching losses low vf schottky rectifier fetky mosfet / schottky diode absolute maximum ratings parameter max. units maximum junction-to-ambient r ja 50 c/w thermal resistance v w descriptionthe fetky ? family of co-pack hexfet ? mosfets and schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. hexfet power mosfets utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. combining this technology with international rectifiers low forward drop schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. the so-8 has been modified through a customized leadframe for enhanced thermal characteristics. the so- 8 package is designed for vapor phase, infrared or wave soldering techniques. top view 8 12 3 4 5 6 7 a/s a/s a/s g k/d k/d k/d k/d IRF7807D1PBF pd- 95208 www.irf.com 1 irf7807d1 v ds 30v r ds(on) 25m ? q g 14nc q sw 5.2nc q oss 18.4nc
so-8 lead-free downloaded from: http:///
2 www.irf.com electrical characteristics schottky diode & body diode ratings and characteristics repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s; duty cycle 2%. when mounted on 1 inch square copper board, t < 10 sec. 50% duty cycle, rectangular * devices are 100% tested to these parameters. parameter min typ max units conditions diode forward voltage v sd 0.5 v t j = 25c, i s = 1a, v gs =0v 0.39 t j = 125c, i s = 1a, v gs =0v reverse recovery time trr 51 ns t j = 25c, i s = 7.0a, v ds = 16v reverse recovery charge qrr 48 nc di/dt = 100a/s forward turn-on time t on intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) parameter min typ max units conditions drain-to-source v (br)dss 30 v v gs = 0v, i d = 250a breakdown voltage* static drain-source r ds (on) 17 25 m ? v gs = 4.5v, i d = 7a on resistance* gate threshold voltage* v gs (th) 1.0 v v ds = v gs ,i d = 250a drain-source leakage i dss 90 av ds = 24v, v gs = 0v current* 7.2 ma v ds = 24v, v gs = 0v, t j = 125c gate-source leakage i gss +/- 100 na v gs = +/-12v current* total gate charge q gsync 10.5 14 v ds <100mv, synch fet* v gs = 5v, i d = 7a total gate charge q gcont 12 17 v ds = 16v, control fet* v gs = 5v, i d = 7a pre-vth q gs1 2.1 v ds = 16v, i d = 7a gate-source charge post-vth q gs2 0.76 nc gate-source charge gate to drain charge q gd 2.9 switch charge* q sw 3.66 5.2 (q gs2 + q gd ) output charge* q oss 15.3 18.4 v ds = 16v, v gs = 0 gate resistance r g 1.2 ? downloaded from: http:///
www.irf.com 3 fig 3. typical reverse output characteristics fig 4. typical reverse output characteristics fig 2. typical output characteristics fig 1. typical output characteristics 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) 0 10 20 30 40 50 60 70 i s , s o u r c e - t o - d r a i n c u r r e n t ( a ) 380s pulse width tj = 150c vgs top 4.5v 3.5v 3.0v 2.5v 2.0v bottom 0.0v 0.0v 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v vgs top 4.5v 3.5v 3.0v bottom 2.5v 380s pulse width tj = 25c 0.1 1 10 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.5v vgs top 4.5v 3.5v 3.0v bottom 2.5v 380s pulse width tj = 150c 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) 0 10 20 30 40 50 60 i s , s o u r c e - t o - d r a i n c u r r e n t ( a ) 380s pulse width tj = 25c vgs top 4.5v 3.5v 3.0v 2.5v 2.0v bottom 0.0v 0.0v downloaded from: http:///
4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage fig 8. typical transfer characteristics 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss fig 7. normalized on-resistance vs. temperature 0 2 4 6 8 10 12 q g, total gate charge (nc) 0.0 2.0 4.0 6.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) i d = 7.0a v ds = 16v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature ( c ) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 7.0a v gs = 4.5v 2.5 3.0 3.5 v gs , gate-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 10v 380s pulse width downloaded from: http:///
www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-ambient ( hexfet ? mosfet ) 0.1 1 10 100 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) fig 9. on-resistance vs. gate voltage 0 20 40 60 80 0.016 0.018 0.020 0.022 0.024 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v fig 10. on-resistance vs. drain current ( ? ) 2.0 4.0 6.0 8.0 10.0 v gs, gate -to -source voltage (v) 0.01 0.02 0.03 0.04 0.05 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 7.0a downloaded from: http:///
6 www.irf.com mosfet , body diode & schottky diode characteristics fig. 13 - typical values of reverse current vs. reverse voltage fig. 12 - typical forward voltage drop characteristics 0 5 10 15 20 25 30 reverse voltage - v r (v) 0.0001 0.001 0.01 0.1 1 10 100 r e v e r s e c u r r e n t - i r ( m a ) 125c 100c tj = 150c 75c 50c 25c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 forward voltage drop - v f ( v ) 0.1 1 10 100 i n s t a n t a n e o u s f o r w a r d c u r r e n t - i f ( a ) tj = 125c tj = 25c downloaded from: http:///
www.irf.com 7 so-8 package outlinedimensions are shown in milimeters (inches) e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 43 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. out line conf orms t o jede c out line ms -012aa. not es : 1. dimens ioning & t olerancing per as me y14.5m-1994. 2. cont r ol l ing dime ns ion: mil l ime t e r 3. dimens ions are s hown in millimet ers [inches ]. 5 dimens ion doe s not incl ude mold prot rus ions . 6 dimens ion doe s not incl ude mold prot rus ions . mold prot rus ions not t o exceed 0.25 [.010]. 7 dimens ion is t he lengt h of l ead f or s ol dering t o a s ubs t rat e. mold prot rus ions not t o exceed 0.15 [.006]. 8x 1.78 [.070] so-8 part marking information (lead-free) dat e code (yww) xxxx international rectifier logo f7101 y = last digit of the year part number lot code ww = we e k example: t his is an irf7101 (mos fet ) p = designates lead-free product (optional) a = assembly site code downloaded from: http:///
8 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in milimeters (inches) data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualifications standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 05/04 downloaded from: http:///
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